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posted by cmn32480 on Tuesday March 21 2017, @03:12PM   Printer-friendly
from the sooner-than-Duke-Nukem-Forever dept.

Intel has released a 3D XPoint drive. It's not vaporware!

The Intel Optane SSD DC P4800X has a write endurance rating of 30 Drive Writes Per Day, and Intel is hopeful that future products can offer even higher ratings once 3D XPoint memory has more broadly proven its reliability. Today's limited release 375GB models have a three year warranty for a total write endurance rating of 12.3 PB, and once the product line is expanded to broad availability of the full range of capacities in the second half of this year the warranty period will be five years.

Intel is offering the 375GB P4800X in PCIe add-in card form factor with a MSRP of $1520 starting today with a limited early-ship program. In Q2 a 375GB U.2 model will ship, as well as a 750GB add-in card. In the second half of the year the rest of the capacity and form factor options will be available, but prices and exact release dates for those models have not been announced. At just over $4/GB the P4800X seems to fall much closer to DRAM than NAND in price, though to be fair the enterprise SSDs it will compete against are all well over $1/GB and the largest DDR4 DIMMs are around $10/GB.

The product is not as fast at sequential transfers as some SSDs:

The raw specs for the P4800X leaked in February. To summarize: it's a datacenter-oriented part, built for applications with high read/write loads, looking for low latency. The sequential transfer rates of 2400MB/s read, 2000MB/s write, are good, but some of the fastest NAND flash can pull slightly ahead. Where the P4800X excels is its ability to sustain high I/O loads, courtesy of those low latencies.

[...] The P4800X can do 550,000 read IOPS and 500,000 write IOPS, but critically, Intel says it achieves this even at low queue depths. The spec sheet figure has a queue depth of 16, and the company says that a queue depth of about 8 tends to be about the limit seen in the real world. Moreover, Intel says that the latency of each I/O operation remains low even under heavy load. 99.999 percent of operations have a read or write latency below 60 or 100 microseconds (respectively) with a queue depth of 1, rising to 150 or 200 microseconds with a queue depth of 16. Under a comparable load, Intel's own P3700 NAND SSD can only serve 99 percent of operations with a latency below about 2,800 microseconds. Likewise, under sustained write workloads, the P4800X retains its low latency for reads, whereas the read latency of the P3700 NAND steadily deteriorates as the write bandwidth increases.


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  • (Score: 1, Interesting) by Anonymous Coward on Wednesday March 22 2017, @03:37AM

    by Anonymous Coward on Wednesday March 22 2017, @03:37AM (#482525)

    When the first announcements came out it looked exactly like a stage in a data storage regimen.

    It looks to fit in like this with a caching style datastore.
    CPU->L1->L2->L3->DRAM->(controller)DRAM->(xpoint here)->(controller)DRAM->SSD->(controller)DRAM->HD

    Now some of those layers can be smashed into each other depending on use case.

    The benchmarks are starting to show up. Basically way better random than flash. With 'okish' linear. Slightly worse perf than DRAM.

    This type of RAM could be very nice in smallish packages where instead of having DRAM and flash they can combine it. For example SoC packages. There are use cases like that but mostly embedded controllers where weight/package size is an issue.

    Still not a bad showing for new v1 memory type. Should be interesting what they can accomplish on subsequent generations.

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