Gallium nitride processor: Next-generation technology for space exploration
A material known as gallium nitride (GaN), poised to become the next semiconductor for power electronics, could also be essential for various space applications. Yuji Zhao, an expert in electrical and computer engineering at Arizona State University (ASU), plans to develop the first ever processor from gallium nitride, which could revolutionize future space exploration missions.
Gallium nitride is a semiconductor compound commonly used in light-emitting diodes (LEDs). The material has the ability to conduct electrons more than 1,000 times more efficiently than silicon. It outstrips silicon in speed, temperature, power handling, and is expected to replace it when silicon-based devices will reach their limits.
Besides LEDs, GaN can be used in the production of semiconductor power devices as well as RF components. Now, Yuji Zhao aims to use this material to develop a high-temperature microprocessor for space applications. He received a three-year $750,000 grant from NASA's Hot Operating Temperature Technology (HOTTech) program for his project.
"This material can enable electronics system with greater efficiency, much reduced size and weight, and higher operation temperature, all of which are highly desirable for various space applications," Zhao told Astrowatch.net.
Gallium nitride (GaN).
(Score: 0) by Anonymous Coward on Saturday December 30 2017, @06:25PM
Yeah, the thing about Si is that growing an isolator layer is too dang easy. All you need is an atmosphere with O2 (like the one we have) and heat it so the surface burns.