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takyon writes:

The 512 Gb dies are coming:

64-layer 3D NAND is shipping, but the 256Gbit die will come and go rapidly. That's what makes this NAND cycle different. Many of the companies we've spoken to do not want to invest in products with such a limited shelf life. The 512Gbit die are right around the corner from the fabs. Some estimates put a major ramp up coming before mid year. The technology offers a 2x capacity increase while taking only a little more space on the wafer. The bits per wafer doesn't double, but it gets very close. The retail products coming in the second half of 2018 with have a heavy impact on SSD pricing. Some estimates from engineers we've spoken with put retail pricing on track for a 20% to 30% reduction over similar-capacity products shipping today.

Emerging technologies and form factors that reduce the material costs will also play a role. Toshiba Memory America showcased the new RC100 NVMe SSD that uses multi-chip packaging to cram the controller and flash in a single package.

Toshiba has described stacking 8-16 512 Gb dies with through silicon vias (TSVs) to create 512 GB and 1 TB packages. Samsung plans to stack 32 256 Gb dies to make 1 TB packages for an upcoming 128 TB SSD.

Previously: SK Hynix Plans 72-Layer 512 Gb NAND for Late 2017
SK Hynix Developing 96 and 128-Layer TLC 3D NAND
Intel First to Market With 64-Layer 3D NAND SSDs
Western Digital Announces 96-Layer 3D NAND, Including Both TLC and QLC
Toshiba's 3D QLC NAND Could Reach 1000 P/E Cycles
WD Announces 64-Layer 3D QLC NAND With 768 Gb Per Die, to be Shown at Flash Memory Summit

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