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posted by mrpg on Friday January 19 2018, @01:15AM   Printer-friendly
from the to-surf-the-web dept.

Samsung has announced the mass production of 16 Gb GDDR6 SDRAM chips with a higher-than-expected pin speed. The chips could see use in upcoming graphics cards that are not equipped with High Bandwidth Memory:

Samsung has beaten SK Hynix and Micron to be the first to mass produce GDDR6 memory chips. Samsung's 16Gb (2GB) chips are fabricated on a 10nm process and run at 1.35V. The new chips have a whopping 18Gb/s pin speed and will be able to reach a transfer rate of 72GB/s. Samsung's current 8Gb (1GB) GDDR5 memory chips, besides having half the density, work at 1.55V with up to 9Gb/s pin speeds. In a pre-CES 2018 press release, Samsung briefly mentioned the impending release of these chips. However, the speed on release is significantly faster than the earlier stated 16Gb/s pin speed and 64GB/s transfer rate.

18 Gbps exceeds what the JEDEC standard calls for.

Also at Engadget and Wccftech.

Related: GDDR5X Standard Finalized by JEDEC
DDR5 Standard to be Finalized by JEDEC in 2018
SK Hynix to Begin Shipping GDDR6 Memory in Early 2018
Samsung's Second Generation 10nm-Class DRAM in Production


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  • (Score: 3, Interesting) by takyon on Friday January 19 2018, @03:36AM

    by takyon (881) <reversethis-{gro ... s} {ta} {noykat}> on Friday January 19 2018, @03:36AM (#624552) Journal

    I think we'll see some sort of new transistor that uses near-threshold voltages [phys.org] or exploits quantum effects [wikipedia.org]. We could get today's 200 Watt chips to shrink to below 1 Watt of power consumption for the same performance, and the massive reduction in heat will allow easy stacking, which will be expressed by massively increasing core counts (you better learn how to write multithreaded software before a bot does it for you). Meanwhile, HBM is already at 8-16 layers and NAND is around 96-128. Watch those increase to hundreds or tens of thousands of layers.

    The party isn't over yet.

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