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takyon writes:

Samsung has announced the mass production of 16 Gb GDDR6 SDRAM chips with a higher-than-expected pin speed. The chips could see use in upcoming graphics cards that are not equipped with High Bandwidth Memory:

Samsung has beaten SK Hynix and Micron to be the first to mass produce GDDR6 memory chips. Samsung's 16Gb (2GB) chips are fabricated on a 10nm process and run at 1.35V. The new chips have a whopping 18Gb/s pin speed and will be able to reach a transfer rate of 72GB/s. Samsung's current 8Gb (1GB) GDDR5 memory chips, besides having half the density, work at 1.55V with up to 9Gb/s pin speeds. In a pre-CES 2018 press release, Samsung briefly mentioned the impending release of these chips. However, the speed on release is significantly faster than the earlier stated 16Gb/s pin speed and 64GB/s transfer rate.

18 Gbps exceeds what the JEDEC standard calls for.

Also at Engadget and Wccftech.

Related: GDDR5X Standard Finalized by JEDEC
DDR5 Standard to be Finalized by JEDEC in 2018
SK Hynix to Begin Shipping GDDR6 Memory in Early 2018
Samsung's Second Generation 10nm-Class DRAM in Production

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