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posted by Fnord666 on Wednesday April 18 2018, @07:26AM   Printer-friendly
from the flashy-electronics dept.

Over the past decades, computers have become faster and faster and hard disks and storage chips have reached enormous capacities. But this trend cannot continue forever: we are already running up against physical limits that will prevent silicon-based computer technology from attaining any impressive speed gains from this point on. Researchers are particularly optimistic that the next era of technological advancements will start with the development of novel information-processing materials and technologies that combine electrical circuits with optical ones. Using short laser pulses, a research team led by Misha Ivanov of the Max Born Institute in Berlin together with scientists from the Russian Quantum Center in Moscow have now shed light on the extremely rapid processes taking place within these novel materials. Their results have appeared in the journal Nature Photonics.

Of particular interest for modern material research in solid state physics are "strongly correlated systems," so called for the strong interactions between the electrons in these materials. Magnets are a good example of this: the electrons in magnets align themselves in a preferred direction of spin inside the material, and it is this that produces the magnetic field. But there are other, entirely different structural orders that deserve attention. In so-called Mott insulators for example, a class of materials now being intensively researched, the electrons ought to flow freely and the materials should therefore be able to conduct electricity as well as metals. But the mutual interaction between electrons in these strongly correlated materials impedes their flow and so the materials behave as insulators instead.

By disrupting this order with a strong laser pulse, the physical properties can be made to change dramatically. This can be likened to a phase transition from solid to liquid: as ice melts, for example, rigid ice crystals transform into free-flowing water molecules. Very similarly, the electrons in a strongly correlated material become free to flow when an external laser pulse forces a phase transition in their structural order. Such phase transitions should allow us to develop entirely new switching elements for next-generation electronics that are faster and potentially more energy efficient than present-day transistors. In theory, computers could be made around a thousand times faster by "turbo-charging" their electrical components with light pulses.


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  • (Score: 2) by takyon on Wednesday April 18 2018, @01:49PM (3 children)

    by takyon (881) <takyonNO@SPAMsoylentnews.org> on Wednesday April 18 2018, @01:49PM (#668563) Journal

    Photonics or some novel material increases clock speeds to THz levels.

    The new thermal properties from the above allow cores to be stacked and operating without melting the chip. Thousands or tens of thousands of cores appear where there were 4-18 before.

    Such a scenario would be good for both single-threaded and multi-threaded code.

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  • (Score: 2, Redundant) by realDonaldTrump on Wednesday April 18 2018, @03:22PM

    by realDonaldTrump (6614) on Wednesday April 18 2018, @03:22PM (#668609) Homepage Journal

    We truly live in the age of computer. The age of cyber. It's replaced our security guards (not my terrific Secret Service). It's about to replace our drivers (great job, Uber!). The guys in the warehouse can't stop for a piss, because they're competing with cyber. The cyber porn is starting -- no actor, no actress, all cyber. Digital. And more and more people getting EMAIL, all the young kids have EMAIL now. It's a whole new world. Amazing!

  • (Score: 2) by mhajicek on Wednesday April 18 2018, @03:26PM (1 child)

    by mhajicek (51) on Wednesday April 18 2018, @03:26PM (#668612)

    We can't make computers much faster; we simply can't make the vacuum tubes much smaller!

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    • (Score: 4, Interesting) by takyon on Wednesday April 18 2018, @03:43PM

      by takyon (881) <takyonNO@SPAMsoylentnews.org> on Wednesday April 18 2018, @03:43PM (#668617) Journal

      Funny you should mention that. Nanoscale "vacuum tubes" have been proposed as a successor to silicon transistors:

      https://spectrum.ieee.org/semiconductors/devices/introducing-the-vacuum-transistor-a-device-made-of-nothing [ieee.org]

      We’ve been working to develop yet another candidate to replace the MOSFET, one that researchers have been dabbling with off and on for many years: the vacuum-channel transistor. It’s the result of a marriage between traditional vacuum-tube technology and modern semiconductor-fabrication techniques. This curious hybrid combines the best aspects of vacuum tubes and transistors and can be made as small and as cheap as any solid-state device. Indeed, making them small is what eliminates the well-known drawbacks of vacuum tubes.

      [...] Fortunately, if you keep the voltage low, the electrons will never acquire enough energy to ionize helium. So if the dimensions of the vacuum transistor are substantially smaller than the mean free path of electrons (which is not hard to arrange), and the working voltage is low enough (not difficult either), the device can operate just fine at atmospheric pressure. That is, you don’t, in fact, need to maintain any sort of vacuum at all for what is nominally a miniaturized piece of “vacuum” electronics!

      [...] Although we are still at an early stage with our research, we believe the recent improvements we’ve made to the vacuum-channel transistor could one day have a huge influence on the electronics industry, particularly for applications where speed is paramount. Our very first effort to fashion a prototype produced a device that could operate at 460 gigahertz—roughly 10 times as fast as the best silicon transistor can manage. This makes the vacuum-channel transistor very promising for operating in what is sometimes known as the terahertz gap, the portion of the electromagnetic spectrum above microwaves and below infrared.

      https://en.wikipedia.org/wiki/Nanoscale_vacuum-channel_transistor [wikipedia.org]

      The radiation can ionize the atoms in a solid-state transistors. These ionized atoms and corresponding electrons can interfere with the electron transport between the source and collector. However, no ionization occur in the vacuum-channel transistors. Therefore, a vacuum-channel transistor can be used in a high radiation environment such as outer space or inside a nuclear reactor.

      The performance of a vacuum-channel transistor depends upon the field emission of electrons from the source electrode. However, due to the high electric field, the source electrodes degrades over time, thereby decreasing the emission current. Due to the degradation of electrons source electrode, vacuum-channel transistors suffer from poor reliability.

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