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takyon writes:

Crossbar, which has talked up its version of a post-NAND memory/storage technology for years with little to show for it, now has to compete with the elephant in the room:

Crossbar, developer of Resistive RAM (ReRAM) chips, is setting up an AI consortium to help counter, er, resistance to the technology, speed up its adoption, and hopefully outrun Intel's Optane.

ReRAM is a type of non-volatile memory with DRAM-class access latency. So, flash-style solid-state storage with RAM-ish access. However, it is taking a long time to mature into a practical technology that can be deployed in devices to fill the gap between large-capacity, non-volatile, relatively slow NAND, and high-speed, relatively low capacity, volatile DRAM.

[...] Crossbar claims it can design "super dense 3D cross-point arrays, stackable with the capability to scale below 10nm, paving the way for terabytes on a single die." Beat that, Optane. Check out a white paper from the upstart here (registration needed.)

Crossbar continued to develop its ReRAM, inking a licensing agreement with Microsemi in May last year, involving the use of sub-10nm ReRAM tech in coming Microsemi products.

[...] Crossbar says it's working with Japanese authorities to review opportunities for the 2020 Olympics, including video-based event detection and response capability. We'll see if anything comes of that.

Previously: Crossbar 3D Resistive RAM Heads to Commercialization

Related: SanDisk and HP Announce Potential Competitor to XPoint Memory
Fujitsu to Mass Produce Nantero-Licensed NRAM in 2018
Two Resistive Random Access Memory (RRAM) Papers
Intel Announces the Optane SSD 900P: Cheaper 3D XPoint for Desktops
Intel Unveils 58 GB and 118 GB Optane SSDs
Rambus and Gigadrive Form Joint Venture to Commercialize Resistive RAM
Micron Buys Out Intel's Stake in 3D XPoint Joint Venture

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