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Samsung Ships First Commercial Embedded MRAM (eMRAM) Product
Samsung today announced that it has started mass production of its first commercial embedded Magnetic Random Access Memory (eMRAM). Made using its 28FDS (28nm FD-SOI[*]) process technology, the eMRAM module promises to offer higher performance and endurance when compared to eFlash. Furthermore it can be integrated into existing chips, according to the manufacturer.
[...] MRAM is one of the highest-performing and most durable non-volatile memory technologies [that] currently exists. Because its eMRAM does not require an erase cycle before writing data, it is 1,000 times faster than eFlash, Samsung says. It also uses lower voltages when compared to eFlash, and therefore consumes around 1/400th the energy during writing process, according to the maker.
On the flip side, however, MRAM's density and capacity both fall far short of 3D XPoint, DRAM, and NAND flash, which greatly reduces its addressable markets. Samsung is not formally disclosing the capacity of its new eMRAM module; the company is only saying that it yet has to tape out a 1 Gb eMRAM chip in 2019, which strongly suggests that the current offering has a lower capacity.
[*] FD-SOI: Fully Depleted Silicon On Insulator.
Related: Everspin Announces New MRAM Products
(Score: 0) by Anonymous Coward on Friday March 08 2019, @02:04PM
Definitely beats an LS-120 drive with merely 120 MB. And probably is much faster, too.