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takyon writes:

Micron shared details of its 3rd generation of "10 nm-class" DRAM fabrication:

Micron's 3rd Generation 10 nm-class (1Z nm) manufacturing process for DRAM will allow the company to increase the bit density, enhance the performance, and the lower power consumption of its DRAM chips as compared to its 2nd Generation 10 nm-class (1Y nm) technology. In particular, the company says that its 16 Gb DDR4 device consumes 40% less power than two 8 Gb DDR4 DRAMs (presumably at the same clocks). Meanwhile, Micron's 16 Gb LPDDR4X ICs will bring an up to 10% power saving. Because of the higher bit density that the new 1Z nm technology provides, it will be cheaper for Micron to produce high-capacity (e.g., 16 Gb) memory chips for lower-cost, high-capacity memory sub-systems.

[...] As for mobile memory, Micron's 16 Gb LPDDR4X chips are rated for transfer rates up to 4266 MT/s. Furthermore, along with offering LPDDR4X DRAM packages with up to 16 GB (8x16Gb) of LPDDR4X for high-end smartphones, Micron will offer UFS-based multichip packages (uMCP4) that integrate NAND for storage and DRAM. The company's uMCP4 family of products aimed at mainstream handsets will include offerings ranging from 64GB+3GB to 256GB+8GB (NAND+DRAM).

Finally, a reasonable amount of RAM for smartphones. But I think we may need at least 24 GB, if not 32 GB.

Related: Xiaomi Announces Smartphones with 10 GB of RAM
Samsung Mass Producing LPDDR5 DRAM (12 Gb x 8 for 12 GB Packages)

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