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posted by CoolHand on Thursday May 21 2015, @11:17AM   Printer-friendly
from the wishing-our-memory-was-high-bandwidth dept.

Advanced Micro Devices (AMD) has shared more details about the High Bandwidth Memory (HBM) in its upcoming GPUs.

HBM in a nutshell takes the wide & slow paradigm to its fullest. Rather than building an array of high speed chips around an ASIC to deliver 7Gbps+ per pin over a 256/384/512-bit memory bus, HBM at its most basic level involves turning memory clockspeeds way down – to just 1Gbps per pin – but in exchange making the memory bus much wider. How wide? That depends on the implementation and generation of the specification, but the examples AMD has been showcasing so far have involved 4 HBM devices (stacks), each featuring a 1024-bit wide memory bus, combining for a massive 4096-bit memory bus. It may not be clocked high, but when it's that wide, it doesn't need to be.

AMD will be the only manufacturer using the first generation of HBM, and will be joined by NVIDIA in using the second generation in 2016. HBM2 will double memory bandwidth over HBM1. The benefits of HBM include increased total bandwidth (from 320 GB/s for the R9 290X to 512 GB/s in AMD's "theoretical" 4-stack example) and reduced power consumption. Although HBM1's memory bandwidth per watt is tripled compared to GDDR5, the memory in AMD's example uses a little less than half the power (30 W for the R9 290X down to 14.6 W) due to the increased bandwidth. HBM stacks will also use 5-10% as much area of the GPU to provide the same amount of memory that GDDR5 would. That could potentially halve the size of the GPU:

By AMD's own estimate, a single HBM-equipped GPU package would be less than 70mm × 70mm (4900mm2), versus 110mm × 90mm (9900mm2) for R9 290X.

HBM will likely be featured in high-performance computing GPUs as well as accelerated processing units (APUs). HotHardware reckons that Radeon 300-series GPUs featuring HBM will be released in June.

 
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  • (Score: 3, Informative) by takyon on Thursday May 21 2015, @02:20PM

    by takyon (881) <reversethis-{gro ... s} {ta} {noykat}> on Thursday May 21 2015, @02:20PM (#186024) Journal

    http://gtresearchnews.gatech.edu/newsrelease/half-terahertz.htm [gatech.edu]

    The silicon-germanium heterojunction bipolar transistors built by the IBM-Georgia Tech team operated at frequencies above 500 GHz at 4.5 Kelvins (451 degrees below zero Fahrenheit) - a temperature attained using liquid helium cooling. At room temperature, these devices operated at approximately 350 GHz.

    Just get SiGe transistors and clock them way down.

    Well, it's not that simple, but it's a start.

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