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posted by takyon on Tuesday August 04 2015, @11:20PM   Printer-friendly

Toshiba and SanDisk have announced the development of a new 3D NAND product (called V-NAND by Samsung). It uses 48 layers of triple-level cell (TLC) NAND to store 256 Gb (32 GB) in a single die. It is expected to sample in September, and appear in solid-state drives and other products in the second half of 2016. However, the two companies will face plenty of competition. From Anandtech:

The new 3D NAND will face experienced competition from Samsung who are currently shipping 32-layer 3D NAND in capacities up to 128Gb for both MLC and TLC configurations. Samsung has also announced its third generation V-NAND which should be starting mass production in the latter half of this year. Meanwhile, Intel and Micron have stated that their 32-layer 3D NAND will be in mass production by the fourth quarter of this year in the form of a 256Gb MLC die and a 384Gb TLC die. SK Hynix is to begin mass production of a 36-layer 128Gb MLC die during the third quarter and is working toward a 48-layer TLC that will be available in 2016.

All of the major flash manufacturers have now publicized their plans for introducing 3D NAND. Planar NAND won't be disappearing overnight or even in a year, as it takes a lot of time and money to convert a fab to a new process. But from here on out, we can expect all the most interesting news about NAND flash memory to be about 3D.


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  • (Score: 0) by Anonymous Coward on Wednesday August 05 2015, @01:01PM

    by Anonymous Coward on Wednesday August 05 2015, @01:01PM (#218474)

    Bring on the 2TB SSDs!!!