| Title | Samsung Announces "Flashbolt" HBM2E (High Bandwidth Memory) DRAM packages | |
| Date | Friday March 22 2019, @01:41AM | |
| Author | martyb | |
| Topic | ||
| from the AKA-L4-cache dept. | ||
Samsung HBM2E 'Flashbolt' Memory for GPUs: 16 GB Per Stack, 3.2 Gbps
Samsung has introduced the industry's first memory that correspond to the HBM2E specification. The company's new Flashbolt memory stacks increase performance by 33% and offer double per-die as well as double per-package capacity. Samsung introduced its HBM2E DRAMs at GTC, indicating that the gaming market is a target market for this memory.
Samsung's Flashbolt KGSDs (known good stacked die) are based on eight 16-Gb memory dies interconnected using TSVs (through silicon vias) in an 8-Hi stack configuration. Every Flashbolt package features a 1024-bit bus with a 3.2 Gbps data transfer speed per pin, thus offering up to 410 GB/s of bandwidth per KGSD.
Samsung positions its Flashbolt KGSDs for next-gen datacenter, HPC, AI/ML, and graphics applications. By using four Flashbolt stacks with a processor featuring a 4096-bit memory interface, developers can get 64 GB of memory with a 1.64 TB/s peak bandwidth, something that will be a great advantage for capacity and bandwidth-hungry chips. With two KGSDs they get 32 GB of DRAM with an 820 GB/s peak bandwidth.
Also at Tom's Hardware.
Previously: Samsung Increases Production of 8 GB High Bandwidth Memory 2.0 Stacks
JEDEC Updates High Bandwidth Memory Standard With New 12-Hi Stacks
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printed from SoylentNews, Samsung Announces "Flashbolt" HBM2E (High Bandwidth Memory) DRAM packages on 2024-04-20 03:45:02