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posted by Blackmoore on Wednesday December 17 2014, @11:30PM   Printer-friendly
from the I=v/r dept.

In a Dec. 15 presentation at the 2014 International Electron Devices Meeting in San Francisco, Silicon Valley start-up Crossbar said that it has solved a major hurdle towards commercialization of its 3D/vertical resistive random-access memory (RRAM) product.

While 1TnR enables a single transistor to drive over 2,000 memory cells with very low power, it also experiences leakage of a sneak path current that interferes with the performance and reliability of a typical RRAM array. Crossbar's device solves that leakage problem by utilizing a super linear threshold layer. In that layer, a volatile conduction path is formed at the threshold voltage. This device is the industry's first selector capable of suppressing the leakage current at very small dimensions, and it has been successfully demonstrated in a four-megabit test memory chip.

Crossbar has previously made a number of bold claims about their potential NAND flash replacement: that it can fit 1 terabyte in an area the size of a postage stamp, while allowing 20x faster writes than NAND using 5% as much energy. Crossbar also claims 100,000 write cycles compared to NAND's 3,000-10,000. NAND endurance scaling issues have led Samsung, Hynix, SanDisk and Micron to pursue vertical-NAND in order to boost capacity and prolong endurance. Samsung has already commercialized V-NAND with the 850 EVO and 850 Pro SSD lines. Crossbar expects to produce RRAM for wearable devices starting in 2016, with RRAM-based SSDs appearing 18 months later.

In a related development also presented at IEDM, engineers at Stanford University have built a "four-layer prototype high-rise chip" using carbon nanotube transistors (CNTs) and RRAM. The researchers developed a new technique that transfers CNTs from a quartz growth medium to a silicon wafer using an adhesive metal film, "achieving some of the highest density, highest performance CNTs ever made." They fabricated RRAM layers directly atop each CNT logic layer while drilling thousands of interconnections between the layers.

Related Stories

SanDisk and HP Announce Potential Competitor to XPoint Memory 5 comments

HP and SanDisk have announced the development of Storage-Class Memory, a technology with attributes similar to Intel and Micron's 3D XPoint ("crosspoint") memory:

HP and SanDisk are joining forces to combat the Intel/Micron 3D XPoint memory threat, and developing their own Storage-Class Memory (SCM) technology.

SCM is persistent memory that runs at DRAM or near-DRAM speed but is less costly, enabling in-memory computing without any overhead of writing to slower persistent data storage such as flash or disk through a CPU cycle-gobbling IO stack. It requires both hardware and software developments. Micron and Intel's XPoint memory is claimed to be 1,000 times faster than flash with up to 1,000 times flash's endurance. Oddly enough HP and SanDisk say their SCM technology is also "expected to be up to 1,000 times faster than flash storage and offer up to 1,000 times more endurance than flash storage."

[...] The partnership's aim is to create enterprise-class products for Memory-driven Computing and also to build better data centre SSDs. The Storage-Class Memory deal is more long-term: "Our partnership to collaborate on new SCM technology solutions is expected to revolutionise computing in the years ahead."

[...] It's not yet known what the XPoint cell process is, beyond being told it's a bulk change to the material but not a phase-change. Analyst Jim Handy has written an XPoint report which said HP had abandoned its Memristor technology. This SanDisk partnership implies that this point is incorrect.

The HP/SanDisk duo also intend to contribute to HP's Machine concept, "which reinvents the fundamental architecture of computers to enable a quantum leap in performance and efficiency, while lowering costs and improving security."

As we previously reported, Intel and Micron plan to release SSD and DIMM XPoint-based products in 2016, with Intel marketing them under the brand name "Optane".

Is HP's memristor partnership with Hynix obsolete? Will HP Enterprise finally give birth to "The Machine" and change supercomputing? Will Crossbar's ReRAM wither and die, or will the company join the fray and compete to produce the ultimate post-NAND memory?


Original Submission

Rambus and Gigadrive Form Joint Venture to Commercialize Resistive RAM 6 comments

Rambus, GigaDevice form ReRAM joint venture

Reliance Memory has been formed in Beijing, China to commercialize Resistive Random Access Memory (ReRAM) technology. The company is a joint venture between intellectual property developer Rambus Inc. (Sunnyvale, Calif.), fabless chip company GigaDevice Semiconductor (Beijing) Inc. and multiple venture capital companies. VC companies include THG Ventures, West Summit Capital, Walden International and Zhisland Capital.

The value of the investment was not disclosed but the company is expected to make ReRAM for use in embedded and IoT applications. GigaDevice is a fabless chip company that uses foundries to manufacture non-volatile memory and 32bit microcontrollers.

The Rambus ReRAM technology, previously known as CMOx has a heritage that goes back to Rambus's acquisition of Unity Semiconductor Corp. for $35 million in February 2012. Unity has been working on the technology for a decade, but failed to bring the technology to market. Unity had claimed to have developed a passive rewritable cross-point memory array based on conductive metal oxide. This would provide similarities to filament-based metal migration technologies such as those developed by Adesto Technologies Corp. and Crossbar Inc.

Resistive random-access memory. Yes, that Rambus.

Related: Crossbar 3D Resistive RAM Heads to Commercialization
Intel-Micron's 3D XPoint Memory Lacks Key Details
IBM Demonstrates Phase Change Memory with Multiple Bits Per Cell
HP/HPE's Memristor: Probably Dead
Western Digital and Samsung at the Flash Memory Summit
Fujitsu to Mass Produce Nantero-Licensed NRAM in 2018


Original Submission

Crossbar Searching for Funding and Customers for its ReRAM Products to Compete with Intel's Optane 3 comments

Crossbar, which has talked up its version of a post-NAND memory/storage technology for years with little to show for it, now has to compete with the elephant in the room:

Crossbar, developer of Resistive RAM (ReRAM) chips, is setting up an AI consortium to help counter, er, resistance to the technology, speed up its adoption, and hopefully outrun Intel's Optane.

ReRAM is a type of non-volatile memory with DRAM-class access latency. So, flash-style solid-state storage with RAM-ish access. However, it is taking a long time to mature into a practical technology that can be deployed in devices to fill the gap between large-capacity, non-volatile, relatively slow NAND, and high-speed, relatively low capacity, volatile DRAM.

[...] Crossbar claims it can design "super dense 3D cross-point arrays, stackable with the capability to scale below 10nm, paving the way for terabytes on a single die." Beat that, Optane. Check out a white paper from the upstart here (registration needed.)

Crossbar continued to develop its ReRAM, inking a licensing agreement with Microsemi in May last year, involving the use of sub-10nm ReRAM tech in coming Microsemi products.

[...] Crossbar says it's working with Japanese authorities to review opportunities for the 2020 Olympics, including video-based event detection and response capability. We'll see if anything comes of that.

Previously: Crossbar 3D Resistive RAM Heads to Commercialization

Related: SanDisk and HP Announce Potential Competitor to XPoint Memory
Fujitsu to Mass Produce Nantero-Licensed NRAM in 2018
Two Resistive Random Access Memory (RRAM) Papers
Intel Announces the Optane SSD 900P: Cheaper 3D XPoint for Desktops
Intel Unveils 58 GB and 118 GB Optane SSDs
Rambus and Gigadrive Form Joint Venture to Commercialize Resistive RAM
Micron Buys Out Intel's Stake in 3D XPoint Joint Venture


Original Submission

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  • (Score: -1, Offtopic) by Anonymous Coward on Wednesday December 17 2014, @11:46PM

    by Anonymous Coward on Wednesday December 17 2014, @11:46PM (#127030)

    Let's put some effort into editing. Your "summaries" are all over the places, reads like random set of excerpts.

  • (Score: 0) by Anonymous Coward on Thursday December 18 2014, @10:52AM

    by Anonymous Coward on Thursday December 18 2014, @10:52AM (#127116)
    Solved a major hurdle. Not a major hurtle.
  • (Score: 2) by bootsy on Thursday December 18 2014, @03:55PM

    by bootsy (3440) on Thursday December 18 2014, @03:55PM (#127176)

    This looks like a fantastic set of tech, less power use, more capactity per unit area and faster access with devices predicted to last longer than the current generation of tech.

    I can't find any indication from the linked articles on relative price differences. Is this stuff going to be 10 times more expensive or around the same price? How will the price scale as the storage requirments go up?

    I am not an SSD user but I do make use of big MicroSD cards to store FLAC files on a portable audio player. Right now the maximum size of MicroSD card is smaller than I would like and I would be prepared to pay a premuim to get 1TB on a MicroSD card.