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posted by Fnord666 on Tuesday August 22 2017, @10:48PM   Printer-friendly
from the resistance-is-futile dept.

https://www.nist.gov/news-events/news/2017/08/gentle-touch-nist-scientists-push-us-closer-flash-memory-successor

[Resistive random access memory (RRAM)] could form the basis of a better kind of nonvolatile computer memory, where data is retained even when the power is off. Nonvolatile memory is already familiar as the basis for flash memory in thumb drives, but flash technology has essentially reached its size and performance limits. For several years, the industry has been hunting for a replacement.

[...] One hurdle is its variability. A practical memory switch needs two distinct states, representing either a one or a zero, and component designers need a predictable way to make the switch flip. Conventional memory switches flip reliably when they receive a pulse of electricity, but we're not there yet with RRAM switches, which are still flighty.

[...] This randomness cuts into the technology's advantages, but in two recent papers, the research team has found a potential solution. The key lies in controlling the energy delivered to the switch by using multiple, short pulses instead of one long pulse.
Typically, chip designers have used relatively strong pulses of about a nanosecond in duration. The NIST team, however, decided to try a lighter touch—using less energetic pulses of 100 picoseconds, about a tenth as long. They found that sending a few of these gentler signals was useful for exploring the behavior of RRAM switches as well as for flipping them.

"Shorter pulses reduce the variability," Nminibapiel said. "The issue still exists, but if you tap the switch a few times with a lighter 'hammer,' you can move it gradually, while simultaneously giving you a way to check it each time to see if it flipped successfully."

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling (DOI: 10.1109/LED.2017.2656818) (DX)

Impact of RRAM Read Fluctuations on the Program-Verify Approach (DOI: 10.1109/LED.2017.2696002) (DX)


Original Submission

Related Stories

Crossbar Searching for Funding and Customers for its ReRAM Products to Compete with Intel's Optane 3 comments

Crossbar, which has talked up its version of a post-NAND memory/storage technology for years with little to show for it, now has to compete with the elephant in the room:

Crossbar, developer of Resistive RAM (ReRAM) chips, is setting up an AI consortium to help counter, er, resistance to the technology, speed up its adoption, and hopefully outrun Intel's Optane.

ReRAM is a type of non-volatile memory with DRAM-class access latency. So, flash-style solid-state storage with RAM-ish access. However, it is taking a long time to mature into a practical technology that can be deployed in devices to fill the gap between large-capacity, non-volatile, relatively slow NAND, and high-speed, relatively low capacity, volatile DRAM.

[...] Crossbar claims it can design "super dense 3D cross-point arrays, stackable with the capability to scale below 10nm, paving the way for terabytes on a single die." Beat that, Optane. Check out a white paper from the upstart here (registration needed.)

Crossbar continued to develop its ReRAM, inking a licensing agreement with Microsemi in May last year, involving the use of sub-10nm ReRAM tech in coming Microsemi products.

[...] Crossbar says it's working with Japanese authorities to review opportunities for the 2020 Olympics, including video-based event detection and response capability. We'll see if anything comes of that.

Previously: Crossbar 3D Resistive RAM Heads to Commercialization

Related: SanDisk and HP Announce Potential Competitor to XPoint Memory
Fujitsu to Mass Produce Nantero-Licensed NRAM in 2018
Two Resistive Random Access Memory (RRAM) Papers
Intel Announces the Optane SSD 900P: Cheaper 3D XPoint for Desktops
Intel Unveils 58 GB and 118 GB Optane SSDs
Rambus and Gigadrive Form Joint Venture to Commercialize Resistive RAM
Micron Buys Out Intel's Stake in 3D XPoint Joint Venture


Original Submission

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  • (Score: 0, Interesting) by aristarchus on Tuesday August 22 2017, @11:36PM (1 child)

    by aristarchus (2645) on Tuesday August 22 2017, @11:36PM (#557771) Journal

    No comment.

    • (Score: 1, Insightful) by Anonymous Coward on Wednesday August 23 2017, @07:46PM

      by Anonymous Coward on Wednesday August 23 2017, @07:46PM (#558144)

      Stop that nonsense, you naughty unpatriotic pinko liberal commie, you!

  • (Score: 1) by pinchy on Wednesday August 23 2017, @12:07AM (1 child)

    by pinchy (777) on Wednesday August 23 2017, @12:07AM (#557779) Journal

    I read about nano ram years ago and from the description it appeared to be superior to flash and would be able to replace DRAM for the cpu:
    https://en.wikipedia.org/wiki/Nano-RAM [wikipedia.org]

    They must have problems making nano tubes for it cost effectively.
     

  • (Score: 2) by bob_super on Wednesday August 23 2017, @12:19AM (2 children)

    by bob_super (1357) on Wednesday August 23 2017, @12:19AM (#557783)

    Today's word: Flighty, meaning fickle and irresponsible.
    Geez, I really wonder how long it will take the news and my family to bring me a reason to use it...

    • (Score: 0) by Anonymous Coward on Wednesday August 23 2017, @02:14AM (1 child)

      by Anonymous Coward on Wednesday August 23 2017, @02:14AM (#557816)

      What I love are the WOTD calendars. A bunch of people get the same one at work and they all go around using that word. I'm starting to wonder if they are really that full of themselves to not notice exchanges such as, "Hmm, I find that idea to be dubious." "Yes, I suppose it is [one sentence dictionary definition]."

      • (Score: 0) by Anonymous Coward on Wednesday August 23 2017, @02:19AM

        by Anonymous Coward on Wednesday August 23 2017, @02:19AM (#557817)

        You should start using archaic offensive words [mentalfloss.com] in workplace conversatiom.

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