from the big-things-coming-in-small-packages dept.
Samsung has announced that it is producing 64-layer 512 GB embedded Universal Flash Storage (eUFS) NAND chips for smartphones and other mobile devices. The chips boast 860 MB/s sequential read and 255 MB/s sequential write speeds, and 42k/40k random read/write IOPS.
Toshiba has announced its own 64-layer UFS chips ranging from 32 GB to 256 GB.
Samsung has announced a 256 GB memory part based on the UFS 2.0 mobile standard, and it can reach faster sequential read speeds than commonplace SATA 3.0 (600 MB/s) SSDs:
Samsung announced the industry's first 256GB embedded memory based on the Universal Flash Storage (UFS) 2.0 standard, which is meant to replace the eMMC standard. Samsung says that its new UFS 2.0 drive is faster even than some SATA-based SSDs for PCs.
[...] The new embedded storage module is based on Samsung's own V-NAND technology and comes with a "specially-designed high-performance controller." The latest UFS 2.0 memory supports up to 45,000 and 40,000 input/output operations per second (IOPS) for random reading and writing, respectively. That is twice as fast as the previous UFS generation that supported 19,000 and 14,000 IOPS for random read and write workloads.
Samsung's 256GB module achieves up to 850MB/s sequential read speed, which is twice as fast as many SATA SSDs. It also supports up to 256MB/s sequential write speed, which Samsung says is three times faster than what high-performance microSD cards can currently achieve.
[...] The new storage chip should be available in products by the end of the year.
UFS 2.0 parts could potentially reach even higher speeds:
While the new NAND definitely is part of the speed improvement, it couldn't have been achieved without an increase of the interface bandwidth. The new memory today is the first announced UFS 2.0 solution based on a 2-lane interface. The UFS 2.0 standard defines a lane running at up to HS Gear 3 at up to 600MB/s, so doubling up of the lanes gives a theoretical maximum of 1.2GB/s. It'll definitely be interesting to see what devices adopt this storage solution in the near future.
[Note: A comment on the AnandTech story claims "That's not true.Hynix announced half a year ago a HS G3x2 lane solution. And Toshiba must have announced their first one maybe a year before that." -Ed.]
Gizmag reports that Samsung is expected to be the first company to offer for sale a new type of memory card, Universal Flash Storage. The new cards, which follow a JEDEC standard, have the same size and shape as microSD cards but are electrically incompatible with them.
Samsung claims a "sequential read speed of 530 megabytes per second (MB/s)" and, for the 256 GB card (the largest capacity), a "170 MB/s sequential write speed" and "35,000 random IOPS." Gizmag likened the speeds to those obtainable with SSDs. Cards with capacities as small as 32 GB will be offered.