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takyon writes:

Western Digital has announced its intention to include 3D Resistive RAM (ReRAM) as storage class memory (SCM) in future SSDs and other products:

Without making any significant announcements this week, Western Digital indicated that it would use some of the things it has learnt while developing its BiCS 3D NAND to produce its ReRAM chips. The company claims that its ReRAM will feature a multi-layer cross-point implementation, something it originally revealed a while ago.

Perhaps, the most important announcement regarding the 3D ReRAM by Western Digital is the claim about scale and capital efficiency of the new memory. Essentially, this could mean that the company plans to use its manufacturing capacities as well as its infrastructure (testing, packaging, etc.) in Yokkaichi, Japan, to make 3D ReRAM. Remember that SCM is at this point more expensive than NAND, hence, it makes sense to continue using the current fabs and equipment to build both types of non-volatile memory so ensure that the SCM part of the business remains profitable.

One of WD's slides projects SCM as 50% the cost per gigabyte of DRAM in 2017, declining to 5% by 2023.

Samsung introduced its fourth generation of vertical NAND, with 64 layers:

With a per-die capacity of 512Gb (64GB), Samsung can now put 1TB of TLC flash in a single package. This means most product lines will be seeing an increase in capacity at the high end of the range. Their BGA SSD products will be offering 1TB capacity even in the 11.5mm by 13mm form factor. The 16TB PM1633a SAS SSD will be eclipsed by the new 32TB PM1643. Likely to be further out, the PM1725 PCIe add-in card SSD will be succeeded by the PM1735 with a PCIe 4 x8 host interface.

Complementing the NAND update will be a new non-standard oversized M.2 form factor 32mm wide and 114mm long, compared to the typical enterprise M.2 size of 22mm by 110mm. A little extra room can go a long way, and Samsung will be using it to produce 8TB drives. These will be enterprise SSDs and Samsung showed a diagram of these enabling 256TB of flash in a 1U server. Samsung will also be producing 4TB drives in standard M.2 sizing.

In what is likely a bid to steal some thunder from 3D XPoint memory before it can ship, Samsung announced Z-NAND memory technology and a Z-SSD product based around Z-NAND and a new SSD controller. They said nothing about the operating principles of Z-NAND, but they did talk about their plans for the Z-SSD products.

Original Submission

takyon writes:

Samsung will use QLC NAND to create a 128 TB SSD:

For now, let's talk about the goods we'll see over the next year. The biggest news to come out of the new Samsung campus is QLC flash. Samsung's customers set performance and endurance specifications and don't care about the underlying technology as long as those needs are met. Samsung says it can achieve its targets with its first generation QLC (4-bits per cell) V-NAND technology.

The first product pre-announcement (it doesn't have a product number yet) is a 128TB SAS SSD using QLC technology with a 1TB die size. The company plans to go beyond 16 die per package using chip stacking technology that will yield 32 die per package, a flash industry record.

NAND revenue has increased 55% in one year.

Previously: Seagate Demonstrates a 60 TB 3.5" SSD
Toshiba Envisions a 100 TB QLC SSD in the "Near Future"
Western Digital Announces 96-Layer 3D NAND, Including Both TLC and QLC
Toshiba's 3D QLC NAND Could Reach 1000 P/E Cycles

Original Submission

takyon writes:

Samsung is about to make 4TB SSDs and mobile storage cheaper

A couple of years ago, Samsung launched its first 4TB solid state drives, which might as well not have existed given their $1,499 asking price. Today, the company announces the commencement of mass production of a more — though it's too early to know exactly how much more — affordable variant with its 4TB QLC SSDs. The knock on QLC NAND storage has traditionally been that it sacrifices speed for an increased density, however Samsung promises the same 540MBps read and 520MBps write speeds for its new SSDs as it offers on its existing SATA SSD drives.

Describing this new family of storage drives, which will also include 1TB and 2TB variants, as consumer class, Samsung will obviously aim to price them at a level where quibbles about performance will be overwhelmed by the sheer advantage of having terabytes of space. Any concerns about the reliability of these drives should also be allayed by the three-year warranty promised by Samsung. The launch of the first drives built around these new storage chips is slated for later this year.

What's the endurance of QLC NAND again?

Also at Engadget.

Related: Toshiba's 3D QLC NAND Could Reach 1000 P/E Cycles
Samsung Announces a 128 TB SSD With QLC NAND
Micron Launches First QLC NAND SSD
Western Digital Samples 96-Layer 3D QLC NAND with 1.33 Tb Per Die

Original Submission

takyon writes:

Western Digital Develops Low-Latency Flash to Compete with Intel Optane

Western Digital is working on its own low-latency flash memory that will offer a higher performance and endurance when compared to conventional 3D NAND, ultimately designed to compete against Optane storage.

At Storage Field Day this week, Western Digital spoke about its new Low Latency Flash NAND. The technology is meant to fit somewhere between 3D NAND and DRAM, similar to Intel's Optane storage and Samsung's Z-NAND. Similar to those technologies, according to Western Digital, its LLF memory will feature access time "in the microsecond range", using 1 bit-per-cell and 2 bit-per-cell architectures.

[...] Western Digital does not disclose all the details regarding its low-latency flash memory and it is impossible to say whether it has anything to do with Toshiba's XL-Flash low-latency 3D NAND introduced last year as well as other specialized types of flash.

[...] In the more long term, Western Digital is working on ReRAM-based SCM internally, and on memristor-based SCM with HP.

The estimate is that WD's LLF memory will be 1/10th the cost of DRAM, and 3x as expensive as 3D NAND.

This sounds like a rebrand of SLC and MLC NAND.

Related: SanDisk and HP Announce Potential Competitor to XPoint Memory
IBM Demonstrates Phase Change Memory with Multiple Bits Per Cell
Western Digital and Samsung at the Flash Memory Summit
Fujitsu to Mass Produce Nantero-Licensed NRAM in 2018
Rambus and Gigadrive Form Joint Venture to Commercialize Resistive RAM
Samsung Shares Plans for 96-Layer TLC NAND, QLC NAND, and 2nd-Generation "Z-NAND"
Crossbar Searching for Funding and Customers for its ReRAM Products to Compete with Intel's Optane
Samsung Announces Mass Production of Commercial Embedded Magnetic Random Access Memory (eMRAM)

Original Submission

takyon writes:

SK Hynix Starts Production of 128-Layer 4D NAND, 176-Layer Being Developed

SK Hynix has announced it has finished development of its 128-layer 1 terabit 3D TLC NAND flash. The new memory features the company's charge trap flash (CTF) design, along with the peripheral under cells (PUC) architecture that the company calls '4D' NAND, announced some time ago. The new 128-layer TLC NAND flash devices will ship to interested parties in the second half of this year, and SK Hynix intends to offer products based on the new chips in 2020.

[...] In the first half of next year SK Hynix promises to roll out its UFS 3.1 storage products based on the new 1 Tb devices. The company plans to offer 1 TB UFS 3.1 chips that will consume up to 20% less [power] when compared to similar products that use 512 Gb ICs.

[...] String stacking technology, as well as the multi-stacked design, will enable SK Hynix to keep increasing the number of layers. SK Hynix says that it is currently developing 176-layer 4D NAND flash, but does not disclose when it is expected to become available.

Previously: "String-Stacking" Being Developed to Enable 3D NAND With More Than 100 Layers
SK Hynix Developing 96 and 128-Layer TLC 3D NAND

Related: Expect 20-30% Cheaper NAND in Late 2018
Micron: 96-Layer 3D NAND Coming, 3D XPoint Sales Disappoint
Western Digital Samples 96-Layer 3D QLC NAND with 1.33 Tb Per Die
Samsung Shares Plans for 96-Layer TLC NAND, QLC NAND, and 2nd-Generation "Z-NAND"

Original Submission

takyon writes:

Toshiba has provided more details about XL-FLASH, a high-performance version of 3D 1-bit-per-cell NAND memory:

Last year at Flash Memory Summit, Toshiba announced XL-FLASH, a specialized low-latency SLC[*] 3D NAND flash memory that is their answer to Samsung's Z-NAND (and to a lesser extent, Intel's 3D XPoint). Few details were provided at the time, but this year Toshiba is ready to give out more information, including a timeline for bringing it to market: sampling starts next month, and mass production begins next year.

The first XL-FLASH parts will use a 128Gb die, divided into 16 planes to support a much higher degree of parallelism than existing capacity-oriented 3D NAND parts. The page size will be 4kB, significantly smaller than what most 3D NAND uses, but that's not a surprise given that XL-FLASH is storing just one bit per cell rather than three or four. Toshiba's press release does not disclose the erase block size, but we expect it to be similarly smaller than what's used in high-capacity NAND designs. As for performance, Toshiba says read latency will be less than 5 microseconds, compared to about 50 µs for their 3D TLC.

Package size is 32 GB (2 dies), 64 GB (4 dies), or 128 GB (8 dies).

3D SLC NAND should continue to improve in the future as layer counts hit 176, 256, and beyond.

[*] SLC, MLC, TLC, and QLC explainer.

Also at Guru3D.

See also: Memblaze's PBlaze5 X26: Toshiba's XL-Flash-Based Ultra-Low Latency SSD

Related: Western Digital and Samsung at the Flash Memory Summit
Samsung Shares Plans for 96-Layer TLC NAND, QLC NAND, and 2nd-Generation "Z-NAND"
Western Digital's Low Latency Flash: A Competitor to Intel's Optane (3D XPoint)?

Original Submission