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posted by janrinok on Thursday May 12, @05:44AM   Printer-friendly [Skip to comment(s)]
from the transistor-pressed-against-an-ear dept.

High-performance hysteresis-free perovskite transistors:

Recently, a POSTECH research team led by Professor Yong-Young Noh and Ph.D. candidates Huihui Zhu and Ao Liu (Department of Chemical Engineering), in collaboration with Samsung Display, has developed a p-channel perovskite thin film transistor (TFT) with a threshold voltage of 0 V.

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation

In this study, the research team constructed a methylammonium-tin-iodine (MASnI3) semiconductor layer by mixing the halide anions (iodine-bromine-chlorine) to increase the stability of the transistor. The device made using this semiconductor layer showed high performance and excellent stability without hysteresis.

In experiments, the TFTs realized a high hole mobility of 20cm2V-1s-1 and 10 million on/off current ratio, and also reached the threshold voltage of 0 V. A P-channel perovskite transistor with a threshold voltage of 0 V is the first such case in the world. By making the material into a solution, the researchers also enabled the transistors to be printed, lowering their manufacturing cost.

Journal Reference:
Zhu, Huihui, Liu, Ao, Shim, Kyu In, et al. High-performance hysteresis-free perovskite transistors through anion engineering [open], Nature Communications (DOI: 10.1038/s41467-022-29434-x)

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  • (Score: 2, Interesting) by Puffin on Thursday May 12, @06:19AM (5 children)

    by Puffin (17060) on Thursday May 12, @06:19AM (#1244308)

    Does anyone have any idea what this word means?


    Interesting, given recent politics.

    • (Score: 2) by Kell on Thursday May 12, @07:08AM (3 children)

      by Kell (292) on Thursday May 12, @07:08AM (#1244316)


      [ his-tuh-ree-sis ]
      noun Physics
      1. the lag in response exhibited by a body in reacting to changes in the forces, especially magnetic forces, affecting it. Compare magnetic hysteresis.
      2. the phenomenon exhibited by a system, often a ferromagnetic or imperfectly elastic material, in which the reaction of the system to changes is dependent upon its past reactions to change.

      Origin of hysteresis
      1795–1805; Greek hystérēsis deficiency, state of being behind or late, hence inferior, equivalent to hysterē-, variant stem of hystereîn to come late, lag behind, verbal derivative of hýsteros coming behind + -sis-sis


      Scientists ask questions. Engineers solve problems.
    • (Score: 2) by Immerman on Thursday May 12, @07:05PM

      by Immerman (3985) on Thursday May 12, @07:05PM (#1244500)

      In this context it's basically the "stickiness" of a transistor - it's tendency to remain in the state it's currently in.

      E.g. if you slowly increase the controlling voltage to a transistor in a 5V digital circuit it might "turn on" when the voltage reaches 4V. You'd then reasonably expect that as you slowly lowered the voltage it would "turn off" when the voltage falls below 4V - but instead you'll find that it remains on until the voltage falls below maybe 2V.

      (please note, all these numbers were made up on the spot to illustrate the principle - my electronics are quite rusty)

      The Wikipedia link offered in another reply has far more detail, but I thought a "10,000ft overview" would be appreciated.