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posted by cmn32480 on Tuesday April 05 2016, @06:06PM   Printer-friendly
from the everything-is-getting-smaller dept.

Samsung Electronics has announced the production of "10nm-class" 8 gigabit DRAM chips that will be used in DDR4 modules with capacities ranging from 4 GB to 128 GB. "10nm-class" is an industry term that refers to an unspecified process somewhere between 10 nanometers and 19 nanometers.

In November, Samsung announced the production of 128 GB DDR4 registered dual inline memory modules (RDIMMs) using through silicon via (TSV) stacked dies with four 8 gigabit chips per package. Those modules used 20nm process DRAM and achieved a 2,400 Mbps data rate. The new 10nm-class memory will support a 3,200 Mbps data rate.

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  • (Score: 2) by Alfred on Tuesday April 05 2016, @08:06PM

    by Alfred (4006) on Tuesday April 05 2016, @08:06PM (#327770) Journal
    Whoa, check that picture. The bottom edge with the contacts is not straight. I suppose this is to keep you from seating them in a DDR3 slot but really, couldn't they just make them a different size or another notch location? I'd prefer smaller size since I like building with ITX boards.

    And how many Bubba's IT Trailers will try and shave the PCB straight to use it somewhere they shouldn't ;-)
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