Samsung has announced that it is producing 64-layer 512 GB embedded Universal Flash Storage (eUFS) NAND chips for smartphones and other mobile devices. The chips boast 860 MB/s sequential read and 255 MB/s sequential write speeds, and 42k/40k random read/write IOPS.
Toshiba has announced its own 64-layer UFS chips ranging from 32 GB to 256 GB.
Also at Engadget and ZDNet.
Previously: Samsung 256 GB UFS 2.0 Phone Storage is Faster than some SATA SSDsSamsung to Offer New Type of Flash Memory Card
Mark All as Read
Mark All as Unread
even though your current magic crystals work just fine.
Oh, don't worry. Your* non-replaceable battery will ever weaken as it reaches towards its max number of charge cycles, and your* non-replaceable flash memory will begin dropping data as it reaches towards its maximum number of write cycles, and the increasingly bloated and ever-higher-level abstracted (and ever-less-functional, and ever-poorer user-interface-laden) apps you* buy will eat both of those resources ever faster as the resources themselves shrink day by day...
...and you* will want those new magic crystals, or you* won't be able to post your latest angst-fest on fleecebook and twaddle.
New magic crystals for everyone!* Yay!
* Not necessarily you you, but the generic "you" that makes up the vast majority of the marketplace.