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takyon writes:

Ryzen Up: AMD to 3D Stack DRAM and SRAM on Processors

AMD revealed at a recent high performance computing event that it is working on new designs that use 3D-stacked DRAM and SRAM on top of its processors to improve performance.

[...] Intel whipped the covers off its Foveros 3D chip stacking technology during its recent Architecture Day event and revealed it already has a leading-edge product ready to enter production. The package consists of a 10nm CPU and an I/O chip mated with TSVs (Through Silicon Via) that connect the die through vertical electrical connections in the center of the die. Intel also added a memory chip to the top of the stack using a conventional PoP (Package on Package) implementation.

Not to be left behind, AMD is also turning its eyes toward 3D chip stacking techniques, albeit from a slightly different angle. AMD SVP and GM Forrest Norrod recently presented at the Rice Oil and Gas HPC conference and revealed that the company has its own 3D stacking intiative underway.

[...] [True] 3D stacking consists of two die (in this case, memory and a processor) placed on top of each other and connected through vertical TSV connections that mate the die directly together. These TSV connections, which transfer data between the two die at the fastest speeds possible, typically reside in the center of the die. That direct mating increases performance and reduces power consumption (all data movement requires power, but direct connections streamline the process). 3D stacking also affords density advantages.

Where are the CPUs with attached High Bandwidth Memory?

Related: Intel Announces "Sunny Cove", Gen11 Graphics, Discrete Graphics Brand Name, 3D Packaging, and More
Intel Details Lakefield CPU SoC With 3D Packaging and Big/Small Core Configuration

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