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takyon writes:

SK Hynix Starts Production of 128-Layer 4D NAND, 176-Layer Being Developed

SK Hynix has announced it has finished development of its 128-layer 1 terabit 3D TLC NAND flash. The new memory features the company's charge trap flash (CTF) design, along with the peripheral under cells (PUC) architecture that the company calls '4D' NAND, announced some time ago. The new 128-layer TLC NAND flash devices will ship to interested parties in the second half of this year, and SK Hynix intends to offer products based on the new chips in 2020.

[...] In the first half of next year SK Hynix promises to roll out its UFS 3.1 storage products based on the new 1 Tb devices. The company plans to offer 1 TB UFS 3.1 chips that will consume up to 20% less [power] when compared to similar products that use 512 Gb ICs.

[...] String stacking technology, as well as the multi-stacked design, will enable SK Hynix to keep increasing the number of layers. SK Hynix says that it is currently developing 176-layer 4D NAND flash, but does not disclose when it is expected to become available.

Previously: "String-Stacking" Being Developed to Enable 3D NAND With More Than 100 Layers
SK Hynix Developing 96 and 128-Layer TLC 3D NAND

Related: Expect 20-30% Cheaper NAND in Late 2018
Micron: 96-Layer 3D NAND Coming, 3D XPoint Sales Disappoint
Western Digital Samples 96-Layer 3D QLC NAND with 1.33 Tb Per Die
Samsung Shares Plans for 96-Layer TLC NAND, QLC NAND, and 2nd-Generation "Z-NAND"

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