| Title | High-performance Hysteresis-free Perovskite Transistors | |
| Date | Thursday May 12 2022, @05:44AM | |
| Author | janrinok | |
| Topic | ||
| from the transistor-pressed-against-an-ear dept. | ||
High-performance hysteresis-free perovskite transistors:
Recently, a POSTECH research team led by Professor Yong-Young Noh and Ph.D. candidates Huihui Zhu and Ao Liu (Department of Chemical Engineering), in collaboration with Samsung Display, has developed a p-channel perovskite thin film transistor (TFT) with a threshold voltage of 0 V.
Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation
In this study, the research team constructed a methylammonium-tin-iodine (MASnI3) semiconductor layer by mixing the halide anions (iodine-bromine-chlorine) to increase the stability of the transistor. The device made using this semiconductor layer showed high performance and excellent stability without hysteresis.
In experiments, the TFTs realized a high hole mobility of 20cm2V-1s-1 and 10 million on/off current ratio, and also reached the threshold voltage of 0 V. A P-channel perovskite transistor with a threshold voltage of 0 V is the first such case in the world. By making the material into a solution, the researchers also enabled the transistors to be printed, lowering their manufacturing cost.
Journal Reference:
Zhu, Huihui, Liu, Ao, Shim, Kyu In, et al. High-performance hysteresis-free perovskite transistors through anion engineering [open], Nature Communications (DOI: 10.1038/s41467-022-29434-x)
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