Samsung Electronics has announced the production of "10nm-class" 8 gigabit DRAM chips [businesswire.com] that will be used in DDR4 modules with capacities ranging from 4 GB to 128 GB. "10nm-class" is an industry term that refers to an unspecified process somewhere between 10 nanometers and 19 nanometers.
In November, Samsung announced the production of 128 GB DDR4 registered dual inline memory modules (RDIMMs) [soylentnews.org] using through silicon via (TSV) stacked dies with four 8 gigabit chips per package. Those modules used 20nm process DRAM and achieved a 2,400 Mbps data rate. The new 10nm-class memory will support a 3,200 Mbps data rate.