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takyon [soylentnews.org] writes:

SK Hynix: Up to DDR5-8400 at 1.1 Volts [anandtech.com]

Back in November last year, we reported that SK Hynix had developed and deployed its first DDR5 DRAM [anandtech.com]. Fast forward to the present, and we also know SK Hynix has recently been working on its DDR5-6400 [anandtech.com] DRAM, but today the company has showcased that it has plans to offer up to DDR5-8400, with on-die ECC, and an operating voltage of just 1.1 Volts.

WIth CPU core counts rising with the fierce battle ongoing between Intel and AMD in the desktop, professional, and now mobile markets, the demand to increase throughput performance is high on the agenda. Memory bandwidth by comparison has not been increasing as much, and at some level the beast needs to be fed. Announcing more technical details on its official website, SK Hynix has been working diligently on perfecting its DDR5 chips with capacity for up to 64 Gb per chip.

Micron will begin selling High Bandwidth Memory (HBM) [anandtech.com] this year, entering the market alongside Samsung and SK Hynix and potentially lowering prices:

Bundled in their latest earnings call, Micron has revealed that later this year the company will finally introduce its first HBM DRAM for bandwidth-hungry applications. The move will enable the company to address the market for high-bandwidth devices such as flagship GPUs and network processors, which in the last five years have turned to HBM to meet their ever-growing bandwidth needs. And as the third and final of the "big three" memory manufacturers to enter the HBM market, this means that HBM2 memory will finally be available from all three companies, introducing a new wrinkle of competition into that market.

Also at Wccftech [wccftech.com].

See also: Cadence DDR5 Update: Launching at 4800 MT/s, Over 12 DDR5 SoCs in Development [anandtech.com]

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