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Phoenix666 [soylentnews.org] writes:

In a new study, scientists have opened a band gap in graphene [phys.org] by carefully doping both sides of bilayer graphene in a way that avoids creating disorder in the graphene structure. Delicately opening up a band gap in graphene in this way enabled the researchers to fabricate a graphene-based memory transistor with the highest initial program/erase current ratio reported to date for a graphene transistor (34.5 compared to 4), along with the highest on/off ratio for a device of its kind (76.1 compared to 26), while maintaining graphene's naturally high electron mobility (3100 cm2/V·s).

The researchers, led by Professor Young Hee Lee at Sungkyunkwan University and the Institute for Basic Science in Suwon, South Korea, have published their paper on the new method for opening up a band gap in graphene in a recent issue of ACS Nano.

"We successfully demonstrated a graphene transistor with a high on/off ratio and mobility by chemical methods and showed its feasibility as a memory application with a significantly improved program/erase current ratio," first author Si Young Lee, at the Institute for Basic Science and Harvard University

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