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posted by martyb on Wednesday January 20 2016, @05:52PM   Printer-friendly
from the how-much-does-it-cost? dept.

Samsung has announced the mass production of dynamic random access memory (DRAM) packages using the second generation High Bandwidth Memory (HBM2) interface.

AMD was the first and only company to introduce products using HBM1. AMD's Radeon R9 Fury X GPUs featured 4 gigabytes of HBM1 using four 1 GB packages. Both AMD and Nvidia will introduce GPUs equipped with HBM2 memory this year. Samsung's first HBM2 packages will contain 4 GB of memory each, and the press release states that Samsung intends to manufacture 8 GB HBM2 packages within the year. GPUs could include 8 GB of HBM2 using half of the die space used by AMD's Fury X, or just one-quarter of the die space if 8 GB HBM2 packages are used next year. Correction: HBM2 packages may be slightly physically larger than HBM1 packages. For example, SK Hynix will produce a 7.75 mm × 11.87 mm (91.99 mm2) HBM2 package, compared to 5.48 mm × 7.29 mm (39.94 mm2) HBM1 packages.

The 4GB HBM2 package is created by stacking a buffer die at the bottom and four 8-gigabit (Gb) core dies on top. These are then vertically interconnected by TSV holes and microbumps. A single 8Gb HBM2 die contains over 5,000 TSV holes, which is more than 36 times that of a 8Gb TSV DDR4 die, offering a dramatic improvement in data transmission performance compared to typical wire-bonding based packages.

Samsung's new DRAM package features 256GBps of bandwidth, which is double that of a HBM1 DRAM package. This is equivalent to a more than seven-fold increase over the 36GBps bandwidth of a 4Gb GDDR5 DRAM chip, which has the fastest data speed per pin (9Gbps) among currently manufactured DRAM chips. Samsung's 4GB HBM2 also enables enhanced power efficiency by doubling the bandwidth per watt over a 4Gb-GDDR5-based solution, and embeds ECC (error-correcting code) functionality to offer high reliability.

TSV refers to through-silicon via, a vertical electrical connection used to build 3D chip packages such as High Bandwidth Memory.

Update: HBM2 has been formalized in JEDEC's JESD235A standard, and Anandtech has an article with additional technical details.

Previously:
AMD Teases x86 Improvements, High Bandwidth Memory GPUs
AMD Shares More Details on High Bandwidth Memory
Samsung Mass Produces 128 GB DDR4 Server Memory


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  • (Score: 2) by VLM on Wednesday January 20 2016, @06:49PM

    by VLM (445) on Wednesday January 20 2016, @06:49PM (#292178)

    So I look over at a PCB with 800 or so vias and

    over 5,000 TSV holes

    over 5000 things to go wrong... ouch. Well I guess if yields are high enough, its not my problem.

    I imagine they provision these things with massive extra capacity and block out the 20% of the die that doesn't work but still... Wow time.

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  • (Score: 2) by takyon on Wednesday January 20 2016, @07:03PM

    by takyon (881) <{takyon} {at} {soylentnews.org}> on Wednesday January 20 2016, @07:03PM (#292191) Journal

    I imagine they provision these things with massive extra capacity and block out the 20% of the die that doesn't work but still

    I'm willing to massively cling to this explanation.

    This is the second generation of High Bandwidth Memory and the details [kitguru.net] have been known for months. We don't even know what HBM3 will look like.

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