Making faster, more powerful electronics requires smaller but still uniform connections, or junctions, between different materials. For the first time, researchers created extremely small, 5-nanometer-wide junctions [phys.org], which were made in a specific pattern using two different planar, or flat, semiconductors. The simple process to create these two-dimensional junctions involved selective exposure of the semiconductor to laser-vaporized material and could be extended to other systems.
Controllably creating patterned semiconductor junctions in thin planar materials could enable ultrathin microelectronics for numerous applications such as in smartphones, next-generation solar cells, and lighting.
Junctions of two-dimensional (2D) semiconductors could enable next-generation photovoltaics, lighting, and electronics. For example, current electronics rely on 10-nanometer-wide junctions between different semiconductors in three-dimensional (3D) crystals. Controllable synthetic methods are needed to create narrow junctions between different 2D materials. Now, researchers at Oak Ridge National Laboratory have developed a process for creating these junctions between different 2D semiconductors in arbitrary patterns using standard electron beam lithography techniques.