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Samsung Electronics has announced the production of "10nm-class" 8 gigabit DRAM chips that will be used in DDR4 modules with capacities ranging from 4 GB to 128 GB. "10nm-class" is an industry term that refers to an unspecified process somewhere between 10 nanometers and 19 nanometers.
In November, Samsung announced the production of 128 GB DDR4 registered dual inline memory modules (RDIMMs) using through silicon via (TSV) stacked dies with four 8 gigabit chips per package. Those modules used 20nm process DRAM and achieved a 2,400 Mbps data rate. The new 10nm-class memory will support a 3,200 Mbps data rate.
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Samsung Announces "10nm-Class" 8 Gb DRAM Chips
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The debate rages on: Is PL/I Bachtrian or Dromedary?
(Score: 3, Informative) by takyon on Tuesday April 05 2016, @06:36PM
Here is a large version of the photo accompanying the press release: http://mms.businesswire.com/media/20160404006492/en/517461/5/Samsung_10nm-class_DRAM-Group_002.jpg?download=1 [businesswire.com]
Here are the specs of the 128 GB TSV 20nm DDR4, which is registered: http://www.samsung.com/semiconductor/products/dram/server-dram/ddr4-registered-dimm/M393AAK40B41?ia=2503 [samsung.com]
The website makes it fairly easy to search for other DRAM products.
The press release mentions "4GB for notebook PCs to 128GB for enterprise servers".
No NAND mentioned in this story.
[SIG] 10/28/2017: Soylent Upgrade v14 [soylentnews.org]
(Score: 2) by Alfred on Tuesday April 05 2016, @08:06PM
And how many Bubba's IT Trailers will try and shave the PCB straight to use it somewhere they shouldn't ;-)