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Samsung Announces "10nm-Class" 8 Gb DRAM Chips

posted by cmn32480 on Tuesday April 05 2016, @06:06PM   Printer-friendly
from the everything-is-getting-smaller dept.

takyon writes:

Samsung Electronics has announced the production of "10nm-class" 8 gigabit DRAM chips that will be used in DDR4 modules with capacities ranging from 4 GB to 128 GB. "10nm-class" is an industry term that refers to an unspecified process somewhere between 10 nanometers and 19 nanometers.

In November, Samsung announced the production of 128 GB DDR4 registered dual inline memory modules (RDIMMs) using through silicon via (TSV) stacked dies with four 8 gigabit chips per package. Those modules used 20nm process DRAM and achieved a 2,400 Mbps data rate. The new 10nm-class memory will support a 3,200 Mbps data rate.

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  • (Score: 0) by Anonymous Coward on Tuesday April 05 2016, @07:48PM

    by Anonymous Coward on Tuesday April 05 2016, @07:48PM (#327768)

    Or can I only read the press release?

  • (Score: 3, Informative) by takyon on Tuesday April 05 2016, @08:35PM

    by takyon (881) <takyonNO@SPAMsoylentnews.org> on Tuesday April 05 2016, @08:35PM (#327773) Journal

    Mass production does not mean general availability.

    Based on its advancements with the new 10nm-class DDR4 DRAM, Samsung expects to also introduce a 10nm-class mobile DRAM solution with high density and speed later this year, which will further solidify its leadership in the ultra-HD smartphone market.

    While introducing a wide array of 10nm-class DDR4 modules with capacities ranging from 4GB for notebook PCs to 128GB for enterprise servers, Samsung will be extending its 20nm DRAM line-up with its new 10nm-class DRAM portfolio throughout the year.

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