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posted by cmn32480 on Tuesday April 05 2016, @06:06PM   Printer-friendly
from the everything-is-getting-smaller dept.

Samsung Electronics has announced the production of "10nm-class" 8 gigabit DRAM chips that will be used in DDR4 modules with capacities ranging from 4 GB to 128 GB. "10nm-class" is an industry term that refers to an unspecified process somewhere between 10 nanometers and 19 nanometers.

In November, Samsung announced the production of 128 GB DDR4 registered dual inline memory modules (RDIMMs) using through silicon via (TSV) stacked dies with four 8 gigabit chips per package. Those modules used 20nm process DRAM and achieved a 2,400 Mbps data rate. The new 10nm-class memory will support a 3,200 Mbps data rate.

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  • (Score: 3, Insightful) by bitstream on Tuesday April 05 2016, @09:23PM

    by bitstream (6144) on Tuesday April 05 2016, @09:23PM (#327790) Journal

    My thoughts too..
    Btw, why is unregistred RAM that important? extra buffers actually increase the electrical stability.

    The path to smaller and smaller geometry will end up where the uncertainty of matter will wreck the stability of the module. The superficially solid and stable surroundings is just an illusion. In reality all matter above 0 K is shaking and there's subatomic particles shoot out at near speed of light etc. These phenoma will matter a lot less of large geometries and small number of bits. ECC or RAM-RAID will become a necessity, just like harddiscs uses advanced trellis encoding to keep bits correct and ZFS software checks them again.

    Anyone placing these memory modules near a thick concrete wall, rocks or radon site will perhaps get a free geiger counter rather than RAM. Or the chassis and 19" rack is made of Chinese steel from scrapped nuclear sites.

    And don't forget the CAS latency (CL) that will make requesting data in a random rather than a sequential order really, really slow. Notice how the "old" DDR3 interface is actually better on this.

    Any comments?

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