Qualcomm previously revealed the name of its new high-end SoC, but today at CES 2017 it discussed the Snapdragon 835 in greater detail. Replacing the Snapdragon 820/821 as the pinnacle processor in its lineup, the 835 is the first commercial SoC to use Samsung's 10nm "10LPE" FinFET manufacturing node [anandtech.com]. Qualcomm did not disclose die size, but it said the overall package size is 35% smaller than the Snapdragon 820 and contains more than 3 billion transistors. Samsung says its third-generation FinFET node "allows up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption" relative to its first-generation 14nm 14LPE node at the same frequency, so Snapdragon 835's process advantage over the 820, which uses Samsung's second-generation 14LPP node, will be a bit less.
[...] Qualcomm finds itself in a much different position today compared to one year ago when it launched the Snapdragon 820. Back then, it was on the hot seat after its previous flagship products, the Snapdragon 808 and 810, failed to meet expectations. Qualcomm's implementation of ARM's Cortex-A57 CPU core and TSMC's last 20nm planar process were not a good combination, resulting in a generation of flagship phones that struggled to meet or exceed the performance of older models and exhibited higher than normal skin temperatures. The success of Snapdragon 820 would be crucial to regaining its partner's trust and restoring its image with consumers. The 820 was pivotal for another reason too: It introduced Qualcomm's first custom 64-bit CPU core, Kryo. Creating a custom CPU (or GPU/DSP/ISP) is one way for SoC vendors to differentiate their products and establish themselves as innovators. Snapdragon 810's use of stock ARM cores could be construed as a step backwards then after previous Snapdragon SoCs used Qualcomm's custom Krait CPUs. Apple's prior introduction of a custom 64-bit CPU, which caught everyone by surprise, only added fuel to the fire.