Samsung has announced the mass production [tomshardware.com] of 16 Gb GDDR6 [wikipedia.org] SDRAM chips with a higher-than-expected pin speed. The chips could see use in upcoming graphics cards that are not equipped with High Bandwidth Memory [wikipedia.org]:
Samsung has beaten SK Hynix and Micron to be the first to mass produce GDDR6 memory chips. Samsung's 16Gb (2GB) chips are fabricated on a 10nm process and run at 1.35V. The new chips have a whopping 18Gb/s pin speed and will be able to reach a transfer rate of 72GB/s. Samsung's current 8Gb (1GB) GDDR5 memory chips, besides having half the density, work at 1.55V with up to 9Gb/s pin speeds. In a pre-CES 2018 press release [samsung.com], Samsung briefly mentioned the impending release of these chips. However, the speed on release is significantly faster than the earlier stated 16Gb/s pin speed and 64GB/s transfer rate.
18 Gbps exceeds what the JEDEC standard calls for.
Related: GDDR5X Standard Finalized by JEDEC [soylentnews.org]
DDR5 Standard to be Finalized by JEDEC in 2018 [soylentnews.org]
SK Hynix to Begin Shipping GDDR6 Memory in Early 2018 [soylentnews.org]
Samsung's Second Generation 10nm-Class DRAM in Production [soylentnews.org]