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takyon [soylentnews.org] writes:

Samsung has announced [samsung.com] a 30.72 TB SSD. It uses 64-layer 512 Gb TLC NAND dies, with 16 of each stacked to make a 1 TB package. It has 40 GB of DDR4 DRAM cache, also using layered packages:

The PM1643 drive also applies Through Silicon Via (TSV) technology to interconnect 8Gb DDR4 chips, creating 10 4GB TSV DRAM packages, totaling 40GB of DRAM. This marks the first time that TSV-applied DRAM has been used in an SSD.

Complementing the SSD's hardware ingenuity is enhanced software that supports metadata protection as well as data retention and recovery from sudden power failures, and an error correction code (ECC) algorithm to ensure high reliability and minimal storage maintenance. Furthermore, the SSD provides a robust endurance level of one full drive write per day (DWPD), which translates into writing 30.72TB of data every day over the five-year warranty period without failure. The PM1643 also offers a mean time between failures (MTBF) of two million hours.

Samsung started manufacturing initial quantities of the 30.72TB SSDs in January and plans to expand the lineup later this year – with 15.36TB, 7.68TB, 3.84TB, 1.92TB, 960GB and 800GB versions – to further drive the growth of all-flash-arrays and accelerate the transition from hard disk drives (HDDs) to SSDs in the enterprise market.

Also at Ars Technica [arstechnica.com] and The Verge [theverge.com].

Related: SK Hynix Plans 72-Layer 512 Gb NAND for Late 2017 [soylentnews.org]
SK Hynix Developing 96 and 128-Layer TLC 3D NAND [soylentnews.org]
Western Digital Announces 96-Layer 3D NAND, Including Both TLC and QLC [soylentnews.org]
Toshiba Develops 512 GB and 1 TB Flash Chips Using TSV [soylentnews.org]
Expect 20-30% Cheaper NAND in Late 2018 [soylentnews.org]

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